The Following ePIXfab members support the custom prototyping of silicon photonic ICs

imec

130nm CMOS node toolset, 200mm SOI wafers, 220nm silicon with 2 micron BOX, 193nm lithography , C & O band 50G photodiodes and modulators, broadband edgecouplers

For more information contact

Philippe.Absil@imec.be

LETI

130nm CMOS node toolset, 200mm and 300mm SOI wafers, 310nm silicon with 800nm BOX, 193nm lithography, O band modulators and germanium photodiodes

FOR MORE INFORMATION CONTACT

maryse.fournier@cea.fr

IHP

250nm and 130 nm BICMOS process, 200mm SOI wafers, 220nm silicon with 2 micron BOX, 193nm lithography, monolithic electronic-photonic integration

FOR MORE INFORMATION CONTACT

lzimmermann@ihp-microelectronics.com

VTT

150mm SOI wafers, 3 micron thick silicon with 0.4 or 3 micron BOX, compact devices on thick SOI platform, passive silicon photonic devices, 12 micron SOI interposers

FOR MORE INFORMATION CONTACT

silicon.photonics@vtt.fi

AMO

220 nm and 340 nm SOI platforms and LPCVD SiN platform with thickness of upto 360 nm. Flexible foundry platfrom for customized wafer runs

FOR MORE INFORMATION CONTACT

giesecke@amo.de     

This service is suitable for low volume production of customized silicon photonic ICs. The strong background in developing silicon photonic technology platform, the ePIXfab member foundries are capable of tweaking their process to provide various levels of customization.