Detailed Program of the Workshop

Day 1: 21 November 2022

Europe Time (CET) Canada Time (PST) Topic and Speaker
5:00 PM 8:00 AM Welcome by Prof. Roel Baets, Ghent University – imec , Belgium and Prof. Lukas Chrostowski, UBC, Canada
5:05 PM 8:05 AM Tutorial Topic: Laser Integration Approaches in Silicon Photonics

Tutor: Professor Gunther Roelkens, Ghent University – imec, Belgium

In this presentation, I will describe different approaches to laser integration on silicon photonics ranging from hybrid integration over die-to-wafer bonding, to micro-transfer printing and hetero-epitaxial growth.

6:00 PM 9:00 AM Tutorial Topic: Future roadmap of laser integration with silicon photonic ICs

Tutor: Professor John Bowers, University of California, Santa Barbara,  USA

A variety of communication and sensing applications require higher levels of photonic integration and higher levels of photonic performance.  Recently, materials advances have enabled many advances in lasers, modulators, photodetectors and photonic integrated circuit performance.  One example is heterogeneous integration of III-V materials and silicon for terabit/s optical interconnects for data communications and copackaged optics.  Another example is high Q resonators on silicon (Q>400 million) resulting in 70 dB noise reduction in DFB self injection locked lasers with integrated laser linewidths of a few hertz.  The use of silicon nitride waveguides allows the extension of silicon photonics from the infrared through visible wavelengths.  Recent progress in InAs quantum dot lasers epitaxially grown on 300 mm diameter silicon wafers show promise for achieving lower cost and higher performance photonic integrated circuits. The discrete density of states inherent to quantum dot lasers has many benefits: 1) reduced threshold current, 2) higher temperature operation, 3) reduced linewidth enhancement factor resulting in reduced reflection sensitivity and reduced linewidth, and 4) improved reliability.  Prospects and results for integration of quantum dot lasers with photonic integrated circuits will be discussed along with important applications of this technology.

7:00 PM 10:00 AM Adjourn

Day 2: 22 November 2022

Europe Time (CET) Canada Time (PST) Topic and Speaker
5:00 PM 8:00 AM Tutorial Topic: The need for hybrid and heterogeneous photonic integration

Tutor: Professor Martijn Heck, Eindhoven University of Technology, the Netherlands

Photonic integration based on material platforms such as indium phosphide, silicon and silicon nitride has matured and is being implemented in applications in our daily life. However, combination of such technologies might be required for specific applications, beyond the well-known field of communications. I will discuss the need for hybrid or heterogeneous integration, illustrated by some selected applications in, a.o., microwave photonics and quantum technology.

6:00 PM 9:00 AM Topic: Recent progress made by Tower Semiconductor to offer an integrated laser in silicon photonics

Tutor: Dr. Edward Preisler, Tower Semiconductor, USA

Will be provided soon

6:30 PM 9:30 AM Topic: Integration of light source in silicon photonics for high-volume sensing applications

Tutor: Dr. Aaron Zilkie, Rockley Photonics, USA/UK

Will be provided soon

7:00 PM 10:00 AM Adjourn

Day 3: 23 November 2022

Europe Time (CET) Canada Time (PST) Topic and Speaker
5:00 PM 8:00 AM Topic: Micro- lasers and high-speed photodetectors by lateral III-V growth on SOI using MOCVD

Tutor: Professor Kei May Lau, Chinese University of Hong Kong, Hong Kong

To efficiently couple light between active and passive components for Si photonics, we developed the lateral aspect ratio trapping (LART) technology to grow lasers and high-speed photodetectors on patterned commercial SOI substrates for integrated Si photonics. Multimode and single-mode lasing from lateral quantum wells (QWs) as the gain media using LART have been achieved in the 1433 -1630 nm band with varying dimensions of micro-ring lasers. High-performance PDs coupled to Si tapers were also constructed on the monolithic InP/SOI platform with laterally grown p-i-n structures and show open eye diagram exceeding 100 Gb/s.

5:30 PM 8:30 AM Topic: An Open Platform with Integrated Lasers

Tutor: Dr. Tom Mader, OpenLight, USA

We give an overview of OpenLight’s integrated-laser silicon photonics technology. Regular MPW’s are now being offered together with a validated PDK, through our close partnership with Tower Semiconductor. We will describe our technology and the available building blocks we are offering, which enable multiple applications including datacom, telecom, LIDAR, healthcare, HPC, AI and optical computing.  We will present the available components which include lasers, optical amplifiers, InP-based modulators, and InP-based photodetectors.

6:00 PM 9:00 AM Topic: Silicon-photonic-based lasers for coherent transceivers

Tutor: Dr. Christopher Doerr, Aloe Semiconductor, USA

We will discuss using silicon photonics as the external cavity for high-performance lasers for optical coherent communications.  We will discuss system requirements, designs for both tunable and fixed lasers, wavelength lockers, and optical isolation.

6:30 PM 9:30 AM Topic: High-Precision Flip-Chip Bonding of InP Lasers on Silicon Photonics

Tutor: Dr. Joris Van Campenhout, imec, Belgium

We review recent progress at imec in wafer-scale flip-chip assembly of InP DFB lasers on silicon photonics. By leveraging an advanced vision-driven passive alignment pick-and-place tool with laser-assisted reflow bonding capability, an in-plane alignment precision well below 300 nm (mean+3σ) is achieved, in a total bonding cycle time of just 25s. Optical edge-coupling efficiencies of 1.5+-/0.5dB to SiN waveguide are routinely achieved without the need for multi-micron spot-size convertors in the InP devices.

7:00 PM 10:00 AM Adjourn

Day 4: 24 November 2022

Europe Time (CET) Canada Time (PST) Topic and Speaker
5:00 PM 8:00 AM Laser-SiP MPW run (Photonic Wire Bonding)
6:00 PM 9:00 AM Laser-SiP MPW run (Transfer Printing)
7:00 PM 10:00 AM Adjourn