SOI Based Technologies

MPW services available for

  • imec
    • Key attribute: 220 nm SOI platform O and C band passive devices and  50G active devices such as modulators and detectors
  • IHP
    • Key attribute: Monolithic BICMOS photonic integration using 220 nm SOI
  • LETI
    • Key attribute: 310 nm SOI platform O band devices compatible for III-V light source integration

For more information go to Europractice website (click HERE)

MPW services available for

  • LETI
    • Key attribute: 310 nm SOI platform O band devices compatible for III-V light source integration

For more information, visit CMP website (click HERE)

Key attribute: Thick SOI low loss and polarization independent compact passive devices

To access VTT’s silicon photonics, visit VTT website (click HERE) to get more information

Silicon Nitride Based Technologies

To access LioniX’s silicon nitride technology platform, visit LioniX website by clicking HERE

Key technology attribute: Passives for visible to Mid IR wavelengths

To access Ligentec’s silicon nitride technology platform, visit Ligentec website by clicking HERE

Key technology attributes: Ultrathick LPCVD nitride (1.3 to 2.5 micron)  providing passives for telecom and spectroscopy applications

For more information about MPW schedule and technology description, visit CNM website (click HERE)

Keyn technology attributes: 300 nm LPCVD SiN for telecom. and MidIR applications

Since 2015, ePIXfab has handed over the MPW operations for silicon photonics prototyping to Europractice IC.