Silicon nitride (SiN) is emerging as a competitive platform for integrated photonics, but still lacks modulators with high bandwidth, good modulation efficiency, low loss, and covering a wide wavelength range. A research team from Gent University was now able to demonstrate the first electro-optic modulators based on ferroelectric lead zirconate titanate (PZT) films on SiN, in both the O-band and C-band. This approach offers a much-anticipated route towards high-performance phase modulators on SiN.
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